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N-Channel Enhancement-Mode Transistor
Product Summary
V(BR)DSS (V) 200
rDS(on) (W) 0.10
ID (A) 28
TO-254AA
D
Hermetic Package
2N7076
G
Case Isolated
DSG Top View
S N-Channel MOSFET
Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)
Drain-Source Voltage Gate-Source Voltage
Parameter
Continuous Drain Current (TJ = 150_C) Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range Lead Temperature (1/16” from case for 10 sec.)
TC = 25_C TC = 100_C
TC = 25_C TC = 100_C
Symbol VDS VGS
ID IDM
PD TJ, Tstg
TL
Limit
200 "20
28 18 112 150 60 –55 to 150 300
Unit V A W _C
Thermal Resistance Ratings
Parameter
Symbol
Typical
Maximum Unit
Maximum Junction-to-Ambient Maximum Junction-to-Case Case-to-Sink
RthJA
RthJC
RthCS
0.
2N7076 Datasheet
