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P-Channel Enhancement-Mode Transistor
Product Summary
V(BR)DSS (V) –100
rDS(on) (W) 0.210
ID (A) –17
TO-254AA
S
Hermetic Package
2N7079
G
Case Isolated
DSG Top View
D P-Channel MOSFET
Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)
Drain-Source Voltage Gate-Source Voltage
Parameter
Continuous Drain Current (TJ = 150_C) Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range Lead Temperature (1/16” from case for 10 sec.)
TC = 25_C TC = 100_C
TC = 25_C TC = 100_C
Symbol VDS VGS
ID IDM
PD TJ, Tstg
TL
Limit
–100 "20 –17 –10.8 –68 100
40 –55 to 150
300
Unit V A W _C
Thermal Resistance Ratings
Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case Case-to-Sink
Symbol
RthJA RthJC RthCS
Typical 0.2
Maximum 50 1.
2N7079 Datasheet
