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TEMIC
Siliconix
N-Channel Enhancement-Mode Thansistor
2N7075
Product Summary
Vns(V) 100
rnS(on) (Q) 0.065
In (A) 30
TO·254AA Hermetic Package
o
Case Isolated D SG Top View
D
Go--J
S N-Channel MOSFET
Absolute Maximum Ratings (Tc = 25°C Unless Otherwise Noted)
Drain-Source Voltage Gate-Source Voltage
Parameter
Continuous Drain Current (TJ = 150'C)
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Thmperature Range
Lead Temperature eh6" from case for 10 sec.)
I Tc = 25'C I Tc= lOO'C
ITc=25'C ITc = 100'C
Symbol
VDS VGS
ID IDM
Po
TJ. Tstg TL
Limit
100 ±20 30 24 120 150 60 -55 to 150 300
Unit V A W 'C
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient Maximum Junction-ta-Case Case-ta-Sink
P-36736-Rev.
2N7075 Datasheet
