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2N707A - NPN Transistor

Download the 2N707A datasheet PDF. This datasheet also covers the 2N707 variant, as both devices belong to the same npn transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N707-Motorola.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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A 2N707, (SILICON) CASE 22 (TO-18) Collector connected to case MAXIMUM RATINGS NPN silicon epitaxial mesa transistors for VHF oscillator and class C amplifier applications. Rating Collector-Emitter Voltage Collector-Emitter Voltage (RBE ~ 10 ohms) Collector-Base Voltage Emitter-Base Voltage Total Device Dissipation @ TA = 25°C Derate above 250 C Total Device Dissipation @ TC = 25°C Derate above 250 C Operating and Storage Junction Temperature Range Symbol VCEO VCER VCB VEB PD PD TJ,Tstg 2N707 2N707A Unit - 40 Vdc Vdc 28 - 56 70 Vdc 4.0 5.0 Vdc 0.3 0_ 5 Watt 2.0 3_33 mW/oC 1.0 1.2 6.67 8.0 -65 to + 175 Watts mW/oC °c 50 n Input 180 pF 2N707 (Note 1) 2N707A 0.001 /IF 4-30 RFC 1.8 pF 0.17 J.LH /lH 2) .01 J.