| Part Number | 2SA1110 |
|---|---|
| Manufacturer | Panasonic |
| Overview | . . |
2SA1110 Datasheet
The 2SA1110 is a PNP Transistor.
| Part Number | 2SA1110 |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-126 package ·Complement to type 2SC2590 ·Excellent current IC characteristics of forward current transfer ratio hFE vs. collector ·High transition frequency fT ·Optimum for the driver stage o. RACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=-100µA;IB=0 IE=-10µA ;. |
| Part Number | 2SA1110 |
|---|---|
| Description | POWER TRANSISTOR |
| Manufacturer | Inchange Semiconductor |
| Overview |
·Collector-Emitter Breakdown Voltage-
V(BR)CEO= -120V (Min) ·Good Linearity of hFE ·Complement to Type 2SC2590 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPL.
Breakdown Voltage
IE= -10μA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -300mA; IB= -30mA
VBE(sat) Base-Emitter Saturation Voltage
IC= -300mA; IB= -30mA
hFE-1
DC Current Gain
IC= -150mA; VCE= -10V
hFE-2
DC Current Gain
IC= -500mA; VCE= -5V
fT
Current-Gain *Bandwidth Product . |