Collector-Emitter Breakdown Voltage-
V(BR)CEO= -120V (Min)
Good Linearity of hFE
Complement to Type 2SC2590
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for audio frequency power amplifier applications.
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isc Silicon PNP Power Transistor
2SA1110
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
V(BR)CEO= -120V (Min) ·Good Linearity of hFE ·Complement to Type 2SC2590 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-120
V
VCEO Collector-Emitter Voltage
-120
V
VEBO
Emitter-Base Voltage
-5.0
V
IC
Collector Current-Continuous
-0.5
A
ICM
Collector Current-Peak
-1.0
A
PC
Collector Power Dissipation
1.2
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc website：www.iscsemi.
2SA1110 Datasheet
