Datasheet Details
| Part number | 2SA1110 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 215.51 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1110_InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor 2SA1110.
| Part number | 2SA1110 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 215.51 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1110_InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage- V(BR)CEO= -120V (Min) ·Good Linearity of hFE ·Complement to Type 2SC2590 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuous -0.5 A ICM Collector Current-Peak -1.0 A PC Collector Power Dissipation 1.2 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1110 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -100μA;
IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -10μA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SA1110 | PNP Transistor | Panasonic Semiconductor |
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2SA1110 | SILICON POWER TRANSISTOR | SavantIC |
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