2SA1117 datasheet by Inchange Semiconductor.
| Part number | 2SA1117 |
|---|---|
| Datasheet | 2SA1117_InchangeSemiconductor.pdf |
| File Size | 207.95 KB |
| Manufacturer | Inchange Semiconductor |
| Description | POWER TRANSISTOR |
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min.) ·High Power Dissipation ·plement to Type 2SC2608 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose applications. 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter...
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SA1117 | SILICON POWER TRANSISTOR | SavantIC |
View all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SA1110 | POWER TRANSISTOR |
| 2SA1111 | POWER TRANSISTOR |
| 2SA1112 | POWER TRANSISTOR |
| 2SA1102 | POWER TRANSISTOR |
| 2SA1103 | POWER TRANSISTOR |
| 2SA1104 | POWER TRANSISTOR |
| 2SA1105 | POWER TRANSISTOR |
| 2SA1106 | POWER TRANSISTOR |
| 2SA1107 | POWER TRANSISTOR |
| 2SA1108 | POWER TRANSISTOR |
