2SA1121 Datasheet

The 2SA1121 is a Silicon PNP Epitaxial Transistor.

Datasheet4U Logo
Part Number2SA1121
ManufacturerHitachi Semiconductor
Overview 2SA1121 Silicon PNP Epitaxial Application • Low frequency amplifier • Complementary pair with 2SC2618 Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SA1121 Absolute Maximum Ratings (Ta = 25°. f current Collector to emitter saturation voltage DC current transfer ratio V(BR)EBO I CBO VCE(sat) hFE*1 hFE Base to emitter voltage Note: Grade Mark hFE B SB 60 to 120 C SC 100 to 200 VBE 1. The 2SA1121 is grouped by h FE as follows. See characteristic curves of 2SA673. 2 2SA1121 Maximum Colle.
Part Number2SA1121
DescriptionSilicon PNP Transistor
ManufacturerKexin Semiconductor
Overview SMD Type Silicon PNP Epitaxial 2SA1121 SOT-23 Transistors IC Unit: mm Features Low frequency amplifier +0.1 2.4-0.1 +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 . Low frequency amplifier +0.1 2.4-0.1 +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base.
Part Number2SA1121
DescriptionSilicon PNP Epitaxial Transistor
ManufacturerRenesas
Overview of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for th. ) hFE*1
*
*0.2
*0.6 100
* 320 hFE 10
*
* Base to emitter voltage VBE
*
*0.64
* Note: 1. The 2SA1121 is grouped by hFE as follows. Grade C D Mark SC SD hFE 100 to 200 160 to 320 Unit V V V μA V V (Ta = 25°C) Test conditions IC =
*10 μA, IE = 0 IC =
*1 mA, RBE = ∞ IE =
*10 μA, IC.