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2SA1180 Datasheet

The 2SA1180 is a POWER TRANSISTOR. Download the datasheet PDF and view key features and specifications below.

Part Number2SA1180
ManufacturerInchange Semiconductor
Overview ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for po. -1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A VBE(sat) Base-Emitter Saturation Voltage IC= -5A; IB= -0.5A ICBO Collector Cutoff Current VCB= -150V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE.
Part Number2SA1180
DescriptionSILICON POWER TRANSISTOR
ManufacturerSavantIC
Overview ·With TO-3 package ·High power dissipations APPLICATIONS ·For power switching amplifier and general purpose applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (T. wn voltage IC=-25mA ;IB=0 IC=-1mA ;IE=0 IE=-1mA ;IC=0 IC=-5A; IB=-0.5A IC=-5A; IB=-0.5A VCB=-180V; IE=0 VEB=-6V; IC=0 IC=-5A ; VCE=-4V -180 V Collector-base breakdown voltage -180 V Emitter-base breakdown voltage -6 V Collector-emitter saturation voltage -2.0 V Base-emitter saturation v.