2SA1209 Datasheet
2SA1209 Datasheet (SANYO)
SANYO
Ordering number:ENN779D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1209/2SC2911 160V/140mA High-Voltage Switching and AF 100W Predriver Applications Features · Adoption of FBET process. · High .
* Adoption of FBET process.
* High breakdown voltage.
* Good linearity of hFE and small Cob.
* Fast switching speed.
Package Dimensions
unit:mm
2009B
[2SA1209/2SC2911]
8.0 4.0
2.7
1.5 3.0 7.0
11.0
1.6 0.8
0.8
0.6
3.0
0.5
15.5
( ) : 2SA1209
Specifications
Absolute Maximum Ratings at Ta =.
2SA1209 Datasheet (Inchange Semiconductor)
Inchange Semiconductor
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min) ·Good Linearity of hFE ·High Switching Speed ·Complement to Type 2SC2911 ·Minimum Lot-to-Lot variations for robust device performance and r.
ollector-Emitter Saturation Voltage IC= -50mA; IB= -5mA
ICBO
Collector Cutoff Current
VCB= -80V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -4V; IC= 0
hFE
DC Current Gain
IC= -10mA; VCE= -5V
fT
Current-Gain
*Bandwidth Product IC= -10mA; VCE= -10V
COB
Collector Output Capacitance
IE= 0; VCB=.
2SA1209 Datasheet (SavantIC)
SavantIC
·With TO-126 package ·Complement to type 2SC2911 ·High breakdown voltage ·Fast switching speed APPLICATIONS ·High-voltage switching and AF 100W predriver applications PINNING PIN 1 2 3 DESCRIPTION Emi.
DC current gain Transition frequency Output capacitance CONDITIONS IC=-50mA; IB=-5mA VCB=-80V; IE=0 VEB=-4V; IC=0 IC=-10mA ; VCE=-5V IC=-10mA ; VCE=-10V IE=0 ; VCB=-10V;f=1MHz 100 MIN 2SA1209 SYMBOL VCEsat ICBO IEBO hFE fT Cob TYP. MAX -0.4 -0.1 -0.1 400 UNIT V µA µA 150 4.0 MHz pF Switchin.