Datasheet Details
| Part number | 2SA1209 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 215.75 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1209_InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2SA1209 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 215.75 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1209_InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min) ·Good Linearity of hFE ·High Switching Speed ·plement to Type 2SC2911 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-voltage switching and AF 100W predriver applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -140 mA ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -200 mA -10 W -1 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1209 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -50mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SA1209 | PNP/NPN Epitaxial Planar Silicon Transistors | Sanyo Semicon Device |
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2SA1209 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
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| 2SA1227 | POWER TRANSISTOR |
| 2SA1227A | POWER TRANSISTOR |
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| 2SA1249 | POWER TRANSISTOR |