Datasheet Summary
isc Silicon PNP Power Transistor
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -160V(Min)
- Good Linearity of hFE
- High Switching Speed
- plement to Type 2SC2911
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for high-voltage switching and AF 100W predriver...
