2SA1235A Datasheet and Specifications PDF

Production specification Silicon Epitaxial Planar Transistor FEATURES  Small collector to emitter saturation voltage VCE(sat)=-0.3V max(@IC=-100mA,IB=-10mA). Pb Lead-free  Excellent lineary DC f.

* Small collector to emitter saturation voltage VCE(sat)=-0.3V max(@IC=-100mA,IB=-10mA). Pb Lead-free
* Excellent lineary DC forward current gain.
* Super mini package for easy mounting. 2SA1235A APPLICATIONS
* PNP epitaxial type transistor designed for low frequency.
* Voltage amplify applicat.

RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP) 2SA1235A FEATURES * Power dissipation PCM : 0.2 W(Tamb=25OC) * Collector current ICM : -0.2 A * Collec.

* Power dissipation PCM : 0.2 W(Tamb=25OC) * Collector current ICM : -0.2 A * Collector-base voltage V(BR)CBO : -60 V * Operating and storage junction temperature range TJ,Tstg: -55OC to +150OC MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V-O rate flame retardant * Lead: MIL-STD-.

Elektronische Bauelemente 2SA1235A -0.2A , -60V PNP Silicon Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  Low Collector Current  .

 Low Collector Current  Low Collector Power Dissipation CLASSIFICATION OF hFE (1) Product-Rank 2SA1235A-ME Range 150~300 Marking M‧E 2SA1235A-MF 250~500 M‧F SOT-23 A L 3 Top View CB 12 KE 1 D F GH 3 2 J PACKAGE INFORMATION Package MPQ SOT-23 3K LeaderSize 7’ inch REF. A B C D E.

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SA1235A TRANSISTOR (PNP) SOT–23 FEATURES  Low Collector Current  Low Collector Power Dissipation MAXIMU.

* Low Collector Current
* Low Collector Power Dissipation MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RΘJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From .