| Part Number | 2SA1413-Z |
|---|---|
| Manufacturer | NEC |
| Overview | . . |
2SA1413-Z Datasheet
The 2SA1413-Z is a PNP Transistor.
| Part Number | 2SA1413-Z |
|---|---|
| Description | PNP Transistors |
| Manufacturer | Kexin Semiconductor |
| Overview | SMD Type PNP Silicon Transistor 2SA1413-Z TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features High Voltage: VCEO=-600V High speed:tr 1.0ìs +0.2 9.70 -0.2 6.50 +0.2 5. High Voltage: VCEO=-600V High speed:tr 1.0ìs +0.2 9.70 -0.2 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter C. |
| Part Number | 2SA1413-Z |
|---|---|
| Description | PNP SILICON TRIPLE DIFFUSED TRANSISTOR |
| Manufacturer | Renesas |
| Overview |
* High Voltage: VCEO = *600 V * High Speed: tf ≤ 1.0 μs * Complement to 2SC3632-Z ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to base voltage VCBO *600 V Collector to emitter voltage VCEO *600 V Base to emitter voltage VEBO *7 V Collector current (DC) IC(DC) *1.0 A Collector cur. |
| Part Number | 2SA1413-Z |
|---|---|
| Description | PNP Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·With TO-252(DPAK) packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APP. Base-Emitter Saturation Voltage IC= -0.3A; IB= -0.06A VCBO Collector-Base Breakdown Voltage IC= -0.1mA; IB= 0 VCEO Collector-Emitter Breakdown Voltage IC=-10mA;IE=0 VEBO Emitter-Base Breakdown Voltage IE=-0.1mA;IB= 0 ICBO Collector Cutoff Current VCB= -600V; IE= 0 IEBO Emitter Cutoff C. |