| Part Number | 2SA1419 |
|---|---|
| Manufacturer | SANYO |
| Overview |
Ordering number:ENN2007A
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1419/2SC3649
High-Voltage Switching Applications
Features
· Adoption of FBET, MBIT processes. · High breakdown voltage and la.
* Adoption of FBET, MBIT processes. * High breakdown voltage and large current capacity. * Ultrasmall size making it easy to provide high- density hybrid ICs. Package Dimensions unit:mm 2038A [2SA1419/2SC3649] 4.5 1.6 1.5 1.0 2.5 4.25max ( ) : 2SA1419 Specifications Absolute Maximum Ratings at Ta. |
2SA1419 Datasheet
The 2SA1419 is a PNP/NPN Epitaxial Planar Silicon Transistors.
| Part Number | 2SA1419 |
|---|---|
| Description | Bipolar Transistor |
| Manufacturer | onsemi |
| Overview |
DATA SHEET
Bipolar Transistor
(−)160 V, (−)1.5 A, Low VCE(sat), (PNP) NPN Single PCP
2SA1419, 2SC3649
12 3
SOT−89 / PCP−1 CASE 419AU
1. Base 2. Collector 3. Emitter
Features
• Adop.
* Adoption of FBET, MBIT Processes * High Breakdown Voltage and Large Current Capacity * Ultrasmall Size Making it Easy to Provide High *density, Small *sized Hybrid IC’s Specifications ( ): 2SA1419 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Symbol Parameter Conditions Ratings Unit VCBO Collector *to *. |
| Part Number | 2SA1419 |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Kexin Semiconductor |
| Overview | SMD Type High-Voltage Switching Applications 2SA1419 Transistors Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Absolute Maximum Ratings Ta = 25 Paramet. Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Pulse) Collector Power Dissipation Jumction temperature Storage te. |