| Part Number | 2SA1943 Datasheet |
|---|---|
| Manufacturer | Toshiba |
| Overview | TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1943 Power Amplifier Applications 2SA1943 Unit: mm • High collector voltage: VCEO = −230 V (min) • Complementary to 2SC5200 • Recommended for 1. e within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Sta. |
2SA1943 Datasheet PDF
The 2SA1943 is a Silicon PNP Transistor.
| Part Number | 2SA1943 Datasheet |
|---|---|
| Description | PNP SILICON TRANSISTOR |
| Manufacturer | Unisonic Technologies |
| Overview |
, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.
UNISONIC TECHNOLOGIES CO., LTD
4 of 4
QW-R214-00.
* Complementary to UTC 2SC5200 * Recommended for 100W High Fidelity Audio Frequency
Amplifier Output Stage
* ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 2SA1943L-x-T3P-T 2SA1943G-x-T3P-T TO-3P 2SA1943L-x-T3B-T 2SA1943G-x-T3B-T TO-3PB 2SA1943L-x-T3L-T 2SA1943G-x-T. |
| Part Number | 2SA1943 Datasheet |
|---|---|
| Description | 150 Watt Silicon PNP Power Transistors |
| Manufacturer | Thinki Semiconductor |
| Overview | ¡¤ With TO-3PL package ¡¤ Complement to type 2SC5200 APPLICATIONS ¡¤ Power amplifier applications ¡¤ Recommended for 100W high fidelity audio frequency amplifier output stage PINNING Collector Base E. CONDITIONS MIN TYP. MAX UNIT ® SYMBOL V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0 -230 V VCEsat Collector-emitter saturation voltage IC=-8A IB=-0.8A -3.0 V VBE Base-emitter voltage IC=-7A ; VCE=-5V -1.5 V ICBO Collector cut-off current VCB=-230V; IE=0 -5 ¦Ì A . |
| Part Number | 2SA1943 Datasheet |
|---|---|
| Description | PNP Epitaxial Silicon Transistor |
| Manufacturer | onsemi |
| Overview |
PNP Epitaxial Silicon Transistor
FJL4215, 2SA1943
Features
• High Current Capability: IC = 17 A • High Power Dissipation: 150 W • High Frequency: 30 MHz • High Voltage: VCEO = −250 V • Wide S.O.A. fo.
* High Current Capability: IC = 17 A * High Power Dissipation: 150 W * High Frequency: 30 MHz * High Voltage: VCEO = *250 V * Wide S.O.A. for Reliable Operation * Excellent Gain Linearity for Low THD * Complement to 2SC5200 / FJL4315 * Thermal and Electrical Spice Models are Available * Same Transis. |