Datasheet Details
| Part number | 2SA1943N |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.28 KB |
| Description | PNP Transistor |
| Datasheet | 2SA1943N-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2SA1943N |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.28 KB |
| Description | PNP Transistor |
| Datasheet | 2SA1943N-INCHANGE.pdf |
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·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -230V(Min) ·Complement to Type 2SC5200N ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 100W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -230 V VCEO Collector-Emitter Voltage -230 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -1.5 A 150 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1943N isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -8.0A;
IB=- 0.8A VBE(on) Base-Emitter On Voltage IC= -7A ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SA1943N | Silicon PNP Transistor | Toshiba |
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2SA1943 | Silicon PNP Transistor | Toshiba Semiconductor |
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2SA1943 | PNP SILICON TRANSISTOR | UTC |
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2SA1943 | PNP Epitaxial Silicon Transistor | Fairchild Semiconductor |
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2SA1943 | POWER TRANSISTOR | Inchange Semiconductor |
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