| Part number | 2SA1943N |
|---|---|
| Download | 2SA1943N Datasheet (PDF) |
| File Size | 210.28 KB |
| Manufacturer | Inchange Semiconductor |
| Description | PNP Transistor |
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| Manufacturer | Part Number | Description |
|---|---|---|
Toshiba |
2SA1943N | Silicon PNP Transistor |
Toshiba |
2SA1943 | Silicon PNP Transistor |
Unisonic Technologies |
2SA1943 | PNP SILICON TRANSISTOR |
Fairchild |
2SA1943 | PNP Epitaxial Silicon Transistor |
Inchange Semiconductor |
2SA1943 | POWER TRANSISTOR |
·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -8.0A;.
