| Part Number | 2SA1943N Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -230V(Min) ·Complement to Type 2SC5200N ·Minimum Lot-to-Lot variations for robust device perform. V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -8.0A; IB=- 0.8A VBE(on) Base-Emitter On Voltage IC= -7A ; VCE=-5V ICBO Collector Cutoff Current VCB= -230V ; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Curre. |
2SA1943N Datasheet and Specifications PDF
The 2SA1943N is a PNP Transistor.
| Part Number | 2SA1943N Datasheet |
|---|---|
| Description | Silicon PNP Transistor |
| Manufacturer | Toshiba |
| Overview | Bipolar Transistors Silicon PNP Triple-Diffused Type 2SA1943N 1. Applications • Power Amplifiers 2. Features (1) High collector voltage: VCEO = -230 V (min) (2) Complementary to 2SC5200N (3) Recommend. (1) High collector voltage: VCEO = -230 V (min) (2) Complementary to 2SC5200N (3) Recommended for 100-W high-fidelity audio frequency amplifier output stage 3. Packaging and Internal Circuit 2SA1943N 1. Base 2. Collector (Heatsink) 3. Emitter TO-3P(N) 4. Absolute Maximum Ratings (Note) (Unless o. |