2SA2004 Datasheet
2SA2004 Datasheet (Panasonic)
Panasonic
Power Transistors 2SA2004 Silicon PNP epitaxial planer type Unit: mm For power amplification 9.9±0.3 4.6±0.2 2.9±0.2 13.7±0.2 4.2±0.2 Solder Dip • High forward current transfer ratio hFE • Satisf.
φ 3.2±0.1 1.4±0.2 1.6±0.2 0.8±0.1 3.0±0.5 2.6±0.1 I Absolute Maximum Ratings TC = 25°C Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation TC = 25°C Ta = 25°C Tj Tstg Symbol VCBO VCEO VEBO .
2SA2004 Datasheet (Inchange Semiconductor)
Inchange Semiconductor
·Silicon PNP epitaxial planner type ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Driver stage .
0 VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB=- 0.25A VBE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB=- 0.25A ICBO Collector Cutoff Current VCB= -60V ; IE= 0 IEBO Emitter Cutoff Current VEB= -5V ; IC= 0 hFE-1 DC Current Gain IC= -0.1A ; VCE= -2V hFE-2 DC Current.