The 2SA505 is a Silicon PNP Power Transistor.
| Max Operating Temp | 125 °C |
|---|
Inchange Semiconductor
·Collector-Emitter Breakdown Voltage- V(BR)CEO= -50V (Min.) ·Collector-Emitter Saturation Voltage- VCE(sat)= -0.8V (Max.)@ IC= -500mA ·Minimum Lot-to-Lot variations for robust device performance and r.
kdown Voltage IE= -1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA VBE(on) Base-Emitter On Voltage IC= -500mA; VCE= -2V ICBO Collector Cutoff Current VCB= -30V; IE= 0 IEBO Emitter Cutoff Current VEB= -5; IC= 0 hFE-1 DC Current Gain IC= -50mA; VCE= -2V hF.
Toshiba
: SILICON PNP EPITAXIAL TYPE (PCT PROCESS) MEDIUM POWER AMPLIFIER APPLICATIONS. FEATURES • Low Collector Saturation Voltage : VCE ( S at)=-0-32V (Typ.) • Complementary to 2SC495 and 2SC496. 2SA496 2S.
* Low Collector Saturation Voltage : VCE ( S at)=-0-32V (Typ.)
* Complementary to 2SC495 and 2SC496.
2SA496
2SA505,
7.9MAX.
Unit in mm
MAXIMUM RATINGS (Ta=25°c)
CHARACTERISTIC
Collector-Base Voltage
2SA505 2SA496
Collector-Emitter Voltage
Emitter-Base Voltage Collector Current
2SA505 2SA496.
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
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