Datasheet Summary
:
SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
MEDIUM POWER AMPLIFIER APPLICATIONS. Features
- Low Collector Saturation Voltage : VCE ( S at)=-0-32V (Typ.)
- plementary to 2SC495 and 2SC496.
2SA496
2SA505,
7.9MAX.
Unit in mm
MAXIMUM RATINGS (Ta=25°c)
CHARACTERISTIC
Collector-Base Voltage
2SA505 2SA496
Collector-Emitter Voltage
Emitter-Base Voltage Collector Current
2SA505 2SA496
Emitter Current Collector Power Dissipation
Junction Temperature Storage Temperature Range
SYMBOL RATING
-60 v CBO
-40
-50 VCEO
-30 v EBO
-5 ic
-1
Tj
Tstg
-55% 150
UNIT V
V A A W °C...
