2SA503 - Silicon PNP Transistor

Toshiba

Key Features

High Transition Frequency : f T=80MHz (Typ. ).
High Breakdown Voltage : VCEO=-80V : VcEO=- 60v (2SA503) (2SA504).
Low Saturation Voltage : VcE(sat)=-0.12V (at I c=-150mA, I B=-15mA).
Complementary to 2SC503 and 2SC504. (Typ. ).

2SA503 silicon pnp transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SA503
Manufacturer	Toshiba
File Size	137.63 KB
Description	Silicon PNP Transistor
Datasheet	2SA503 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SI LICON PNP EPITAXIAL TYPE (PCT PROCESS) HIGH FREQUENCY AMPLIFIER APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED SWITCHING APPLICATIONS. FEATURES • High Transition Frequency : f T=80MHz (Typ.) • High Breakdown Voltage : VCEO=-80V : VcEO=- 60v (2SA503) (2SA504) • Low Saturation Voltage : VcE(sat)=-0.12V (at I c=-150mA, I B=-15mA) • Complementary to 2SC503 and 2SC504. (Typ.) <1 X < srd CO <6 00.45 1 11 ^05.