Datasheet Summary
isc Silicon PNP Power Transistor
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
V(BR)CEO= -50V (Min.)
- Collector-Emitter Saturation Voltage-
VCE(sat)= -0.8V (Max.)@ IC= -500mA
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for medium power amplifier...
