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2SA505 - Silicon PNP Power Transistor

General Description

Collector-Emitter Breakdown Voltage- V(BR)CEO= -50V (Min.) Collector-Emitter Saturation Voltage- VCE(sat)= -0.8V (Max.)@ IC= -500mA Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for medium power amplifier applications.

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isc Silicon PNP Power Transistor 2SA505 DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -50V (Min.) ·Collector-Emitter Saturation Voltage- VCE(sat)= -0.8V (Max.)@ IC= -500mA ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuous -1 A IE Emitter Current-Continuous 1 A PC Collector Power Dissipation 1 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.