Datasheet Details
| Part number | 2SA505 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.76 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2SA505-InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor 2SA505.
| Part number | 2SA505 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.76 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2SA505-InchangeSemiconductor.pdf |
|
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·Collector-Emitter Breakdown Voltage- V(BR)CEO= -50V (Min.) ·Collector-Emitter Saturation Voltage- VCE(sat)= -0.8V (Max.)@ IC= -500mA ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuous -1 A IE Emitter Current-Continuous 1 A PC Collector Power Dissipation 1 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SA505 | Silicon PNP Transistor | Toshiba |
| Part Number | Description |
|---|---|
| 2SA1001 | Silicon PNP Power Transistor |
| 2SA1003 | Silicon PNP Power Transistor |
| 2SA1007 | Silicon PNP Power Transistor |
| 2SA1008 | POWER TRANSISTOR |
| 2SA1009 | Silicon PNP Power Transistor |
| 2SA1011 | POWER TRANSISTOR |
| 2SA1015 | Silicon PNP Power Transistors |
| 2SA1021 | POWER TRANSISTOR |
| 2SA1028 | Silicon PNP Power Transistor |
| 2SA1040 | Silicon PNP Power Transistors |