• Part: 2SA500
  • Description: Silicon PNP Epitaxial Transistor
  • Manufacturer: Toshiba
  • Size: 117.56 KB
Download 2SA500 Datasheet PDF
2SA500 page 2
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Datasheet Summary

SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 2SA499 2SA500 HIGH FREQUENCY AMPLIFIER APPLICATIONS. HIGH SPEED SWITCHING APPLICATIONS. Features : - High Breakdown Voltage : VcBO=-50V (Min.) (2SA499) : VCBO=-30V (Min.) (2SA500) - High Transition Frequency : f T=250MHz (Typ.) - Fast Switching Speed : t on=25ns (Typ.) - plementary to 2SC400 and 2SC979. INDUSTRIAL APPLICATIONS Unit in mm MZf4.95MAX 00.45 02.54 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector- Emitter Voltage 2SA499 2SA500 2SA499 2SA500 Emitter- Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO ic IB...