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2SA500 - Silicon PNP Epitaxial Transistor

Download the 2SA500 datasheet PDF. This datasheet also covers the 2SA499 variant, as both devices belong to the same silicon pnp epitaxial transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • High Breakdown Voltage : VcBO=-50V (Min. ) (2SA499) : VCBO=-30V (Min. ) (2SA500).
  • High Transition Frequency : f T=250MHz (Typ. ).
  • Fast Switching Speed : t on=25ns (Typ. ).
  • Complementary to 2SC400 and 2SC979.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SA499-Toshiba.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2SA500
Manufacturer Toshiba
File Size 117.56 KB
Description Silicon PNP Epitaxial Transistor
Datasheet download datasheet 2SA500 Datasheet

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Other Datasheets by Toshiba

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
II SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 2SA499 2SA500 HIGH FREQUENCY AMPLIFIER APPLICATIONS. HIGH SPEED SWITCHING APPLICATIONS. FEATURES: • High Breakdown Voltage : VcBO=-50V (Min.) (2SA499) : VCBO=-30V (Min.) (2SA500) • High Transition Frequency : f T=250MHz (Typ.) • Fast Switching Speed : t on=25ns (Typ.) • Complementary to 2SC400 and 2SC979. INDUSTRIAL APPLICATIONS Unit in mm MZf4.95MAX 00.45 02.54 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector- Emitter Voltage 2SA499 2SA500 2SA499 2SA500 Emitter- Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO ic IB PC l stg RATING -50 -30 -40 -20 -5 -100 -20 250 175 -65^175 UNIT mA mA mW JED EC L EMITTER 2.