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2SA743 Datasheet

The 2SA743 is a Silicon PNP Transistor. Download the datasheet PDF and view key features and specifications below.

Part Number2SA743
ManufacturerHitachi Semiconductor
Overview 2SA743, 2SA743A Silicon PNP Epitaxial Application Low frequency power amplifier complementary pair with 2SC1212 and 2SC1212A Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 Absolute Ma. — Max — — —
  –20 — 200 — 2SA743A Min
  –80
  –80
  –4 — — 60 20 — — — Typ — — — — — 120 — Max — — — —
  –20 200 — V V MHz Unit V V V µA Test conditions I C =
  –1 mA, IE = 0 I C =
  –10 mA, RBE = ∞ I E =
  –1 mA, IC = 0 VCE =
  –50 V, RBE = 1 kΩ VCE =
  –80 V, RBE = 1 kΩ VCE =
  –4 V, IC =
  –50 mA VCE =
  –4 V, IC =
  –1 A (.
Part Number2SA743
DescriptionSilicon POwer Transistors
ManufacturerSavantIC
Overview ·With TO-126 package ·Complement to type 2SC1212/1212A APPLICATIONS ·For low frequency power amplifier applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION Abs. -50V; RBE=1k< VCE=-80V; RBE=1k< IC=-50mA ; VCE=-4V IC=-1A ; VCE=-4V IC=-30mA ; VCE=-4V CONDITIONS SYMBOL 2SA743 2SA743A MIN -50 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V -80 -50 V -80 -4 -0.75 -0.65 -1.5 -1.0 -20 -20 60 20 120 MHz 200 V V V µA µA V(BR)CBO Collector-base .
Part Number2SA743
DescriptionPNP Transistor
ManufacturerInchange Semiconductor
Overview ·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -50V (Min) ·Complement to Type 2SC1212 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation . eakdown Voltage IC= -10mA; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A VBE(on) Base-Emitter On Voltage IC= -50mA ; VCE= -4V ICER Collector Cutoff Current VCE= -50V; RBE= 1kΩ hFE-1 DC Current Gain IC= -50mA.

Similar Datasheets

Part Number Manufacturer Description
2SA743A Hitachi Semiconductor Silicon PNP Transistor
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2SA743A Inchange Semiconductor PNP Transistor