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2SA743A Datasheet

The 2SA743A is a Silicon PNP Transistor. Download the datasheet PDF and view key features and specifications below.

Part Number2SA743A
ManufacturerHitachi Semiconductor
Overview 2SA743, 2SA743A Silicon PNP Epitaxial Application Low frequency power amplifier complementary pair with 2SC1212 and 2SC1212A Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 Absolute Ma. — Max — — —
  –20 — 200 — 2SA743A Min
  –80
  –80
  –4 — — 60 20 — — — Typ — — — — — 120 — Max — — — —
  –20 200 — V V MHz Unit V V V µA Test conditions I C =
  –1 mA, IE = 0 I C =
  –10 mA, RBE = ∞ I E =
  –1 mA, IC = 0 VCE =
  –50 V, RBE = 1 kΩ VCE =
  –80 V, RBE = 1 kΩ VCE =
  –4 V, IC =
  –50 mA VCE =
  –4 V, IC =
  –1 A (.
Part Number2SA743A
DescriptionSilicon POwer Transistors
ManufacturerSavantIC
Overview ·With TO-126 package ·Complement to type 2SC1212/1212A APPLICATIONS ·For low frequency power amplifier applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION Abs. -50V; RBE=1k< VCE=-80V; RBE=1k< IC=-50mA ; VCE=-4V IC=-1A ; VCE=-4V IC=-30mA ; VCE=-4V CONDITIONS SYMBOL 2SA743 2SA743A MIN -50 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V -80 -50 V -80 -4 -0.75 -0.65 -1.5 -1.0 -20 -20 60 20 120 MHz 200 V V V µA µA V(BR)CBO Collector-base .
Part Number2SA743A
DescriptionPNP Transistor
ManufacturerInchange Semiconductor
Overview ·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -80V (Min) ·Complement to Type 2SC1212A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation . Breakdown Voltage IC= -10mA; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A VBE(on) Base-Emitter On Voltage IC= -50mA ; VCE= -4V ICER Collector Cutoff Current VCE= -80V; RBE= 1kΩ hFE-1 DC Current Gain IC= -50.

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