2SA756 Datasheet and Specifications PDF

The 2SA756 is a POWER TRANSISTOR.

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Part Number2SA756 Datasheet
ManufacturerInchange Semiconductor
Overview ·High Power Dissipation- : PC= 50W(Max.)@TC=25℃ ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min.) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLIC. Collector-Base Breakdown Voltage IC= -5mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -1A VBE(on) Base-Emitter On Voltage IC= -1A; VCE= -5V ICBO Collector Cutoff Current VCB= -100V; IE= 0 hFE-1 DC Current Gain .
Part Number2SA756 Datasheet
DescriptionSilicon POwer Transistors
ManufacturerSavantIC
Overview ·With TO-3 package ·Complement to type 2SC1030 APPLICATIONS ·For audio amplifier power output applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbo. cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-50mA ;RBE=6 IC=-5mA ,IE=0 IE=-5mA ,IC=0 IC=-5A; IB=-1A IC=-1A ; VCE=-5V VCB=-30V; IE=0 IC=-1A ; VCE=-5V IC=-5A ; VCE=-5V IC=-1A ; VCE=-5V 35 20 20 MIN -80 -100 -6 TYP. 2SA756 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEs.