2SA756 Description
Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-50mA ;RBE=6 IC=-5mA ,IE=0 IE=-5mA ,IC=0 IC=-5A;...