2SA756 Overview
Description
With TO-3 package - Complement to type 2SC1030 APPLICATIONS - For audio amplifier power output applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -100 -80 -6 -6 50 150 -55~150 UNIT V V V A W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-50mA ;RBE=6 IC=-5mA ,IE=0 IE=-5mA ,IC=0 IC=-5A; IB=-1A IC=-1A ; VCE=-5V VCB=-30V; IE=0 IC=-1A ; VCE=-5V IC=-5A ; VCE=-5V IC=-1A ; VCE=-5V 35 20 20 MIN -80 -100 -6 TYP. 2SA756 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBE ICBO hFE-1 hFE-2 fT MAX UNIT V V V -1.8 -1.5 -1 200 V V mA MHz hFE-1 Classifications A 35-70 B 60-120 C 100-200 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA756 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3.
