Datasheet Details
| Part number | 2SA755 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.72 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA755_InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor 2SA755.
| Part number | 2SA755 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.72 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA755_InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= -1.3V(Max.) @ IC= -1.5A ·Good Linearity of hFE ·plement to Type 2SC1419 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -4 V IC Collector Current-Continuous -2 A PC Total Power Dissipation@ TC=25℃ 20 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= -5mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SA755 | Silicon POwer Transistors | SavantIC |
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|---|---|
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