2SA754
2SA754 is PNP Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -50V(Min)
- Low Collector Saturation Voltage-
: VCE(sat)= -1.3V(Max.) @ IC= -1.5A
- Good Linearity of h FE
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-50
VCEO Collector-Emitter Voltage
-50
VEBO
Emitter-Base Voltage
-4
Collector Current-Continuous
-2
Total Power Dissipation@ TC=25℃
Junction Temperature
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SA754 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power...
