Datasheet Details
| Part number | 2SA754 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 202.26 KB |
| Description | PNP Transistor |
| Datasheet | 2SA754-INCHANGE.pdf |
|
|
Overview: isc Silicon PNP Power Transistor.
| Part number | 2SA754 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 202.26 KB |
| Description | PNP Transistor |
| Datasheet | 2SA754-INCHANGE.pdf |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= -1.3V(Max.) @ IC= -1.5A ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -4 V IC Collector Current-Continuous -2 A PC Total Power Dissipation@ TC=25℃ 20 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA754 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= -5mA;
IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SA754 | Silicon POwer Transistors | SavantIC |
| Part Number | Description |
|---|---|
| 2SA758 | PNP Transistor |
| 2SA700 | PNP Transistor |
| 2SA715 | PNP Transistor |
| 2SA740 | PNP Transistor |
| 2SA743 | PNP Transistor |
| 2SA743A | PNP Transistor |
| 2SA744 | PNP Transistor |
| 2SA745A | PNP Transistor |
| 2SA746 | PNP Transistor |
| 2SA762 | PNP Transistor |