High Power Dissipation-
: PC= 50W(Max.)@TC=25℃
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min.)
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for use in audio amplifier power output stage and
general purpose a
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isc Silicon PNP Power Transistor
2SA756
DESCRIPTION ·High Power Dissipation-
: PC= 50W(Max.)@TC=25℃ ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min.) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in audio amplifier power output stage and
general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-6
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
-10
A
50
W
150
℃
Tstg
Storage Temperature
-55~150 ℃
isc website：www.iscsemi.
2SA756 Datasheet
