Datasheet Details
| Part number | 2SA756 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 202.62 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA756_InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor 2SA756.
| Part number | 2SA756 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 202.62 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA756_InchangeSemiconductor.pdf |
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·High Power Dissipation- : PC= 50W(Max.)@TC=25℃ ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min.) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio amplifier power output stage and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -6 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -10 A 50 W 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SA756 | Silicon POwer Transistors | SavantIC |
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