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2SA757 - POWER TRANSISTOR

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Description

High Power Dissipation- : PC= 60W(Max.)@TC=25℃ Collector-Emitter Breakdown Voltage- : V(BR)CEO= -90V(Min.) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio amplifier power output stage and general purpose a

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Datasheet Details

Part number 2SA757
Manufacturer Inchange Semiconductor
File Size 198.35 KB
Description POWER TRANSISTOR
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isc Silicon PNP Power Transistor 2SA757 DESCRIPTION ·High Power Dissipation- : PC= 60W(Max.)@TC=25℃ ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -90V(Min.) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio amplifier power output stage and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -90 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -12 A 60 W 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.iscsemi.
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