Datasheet Details
| Part number | 2SA757 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 198.35 KB |
| Description | POWER TRANSISTOR |
| Datasheet |
 2SA757 Datasheet
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| Part number | 2SA757 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 198.35 KB |
| Description | POWER TRANSISTOR |
| Datasheet |
2SA757 Datasheet
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·High Power Dissipation- : PC= 60W(Max.)@TC=25℃ ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -90V(Min.) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio amplifier power output stage and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -90 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -12 A 60 W 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA757 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA;
RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= -5mA;
isc Silicon PNP Power Transistor 2SA757.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SA757 | Silicon POwer Transistors | SavantIC |
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