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Inchange Semiconductor
2SA757
DESCRIPTION - High Power Dissipation- : PC= 60W(Max.)@TC=25℃ - Collector-Emitter Breakdown Voltage- : V(BR)CEO= -90V(Min.) - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for use in audio amplifier power output stage and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 VCEO Collector-Emitter Voltage -90 VEBO Emitter-Base Voltage -5 Collector Current-Continuous -7 Collector Current-Peak Collector Power Dissipation @TC=25℃ Tj Junction Temperature -12 ℃ Tstg Storage Temperature -55~150 ℃ isc website:.iscsemi....