2SB1002 Datasheet and Specifications PDF

The 2SB1002 is a Silicon PNP Transistor.

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Part Number2SB1002 Datasheet
ManufacturerHitachi Semiconductor
Overview 2SB1002 Silicon PNP Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SD1368 Outline UPAK 1 3 2 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SB1002 Abs. ance Note: Mark hFE Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO I EBO hFE* 1 Min
*70
*50
*6
*
* 100
*
*
*
* Typ
*
*
*
*
*
*
*
* 150 35 Max
*
*
*
*0.1
*0.1 320
*0.6
*1.2
*
* Unit V V V µA µA Test conditions I C =
*10 µA, IE = 0 I C =
*1 mA, RBE = ∞ I E =
*10 µA, IC = 0 VCB =
*50 V, IE = 0 VEB =
*4 V.
Part Number2SB1002 Datasheet
DescriptionPNP Transistors
ManufacturerKexin Semiconductor
Overview SMD Type PNP Transistors 2SB1002 Transistors ■ Features ● Low frequency power amplifier ● Complementary to 2SD1368 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Col.
* Low frequency power amplifier
* Complementary to 2SD1368 1.70 0.1 0.42 0.1 0.46 0.1
* Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector current -Pulse (Note.1) Collector Power.
Part Number2SB1002 Datasheet
DescriptionSilicon PNP Transistor
ManufacturerRenesas
Overview 2SB1002 Silicon PNP Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SD1368 Outline RENESAS Package code: PLZZ0004CA-A (Package name: UPAK R ) 1 2 3 REJ03G0660-0200 (P.
*
* V IC =
*10 µA, IE = 0 Collector to emitter breakdown voltage V(BR)CEO
*50
*
* V IC =
*1 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO
*6
*
* V IE =
*10 µA, IC = 0 Collector cutoff current ICBO
*
*
*0.1 µA VCB =
*50 V, IE = 0 Emitter cutoff current IEBO
*
*
*0.1 µ.