| Part Number | 2SB1026 Datasheet |
|---|---|
| Manufacturer | Hitachi Semiconductor |
| Overview |
2SB1026
Silicon PNP Epitaxial
Application
• Low frequency power amplifier • Complementary pair with 2SD1419
Outline
UPAK
1 3 2
4
1. Base 2. Collector 3. Emitter 4. Collector (Flange)
2SB1026
Abs.
r output capacitance Note: Mark hFE1 VCE(sat) VBE fT Cob
1
Min *120 *100 *5 * 60 30 * * * * Typ * * * * * * * * 140 20 Max * * * *10 200 * *1 *0.9 * * Unit V V V µA Test conditions I C = *10 µA, IE = 0 I C = *1 mA, RBE = ∞ I E = *10 µA, IC = 0 VCB = *100 V, IE = 0 VCE = *5 V, IC = *150 mA VCE =. |
2SB1026 Datasheet and Specifications PDF
The 2SB1026 is a Silicon PNP Transistor.
| Part Number | 2SB1026 Datasheet |
|---|---|
| Description | Silicon PNP Epitaxial Transistor |
| Manufacturer | Renesas |
| Overview |
2SB1026
Silicon PNP Epitaxial
Application
• Low frequency power amplifier • Complementary pair with 2SD1419
Outline
RENESAS Package code: PLZZ0004CA-A (Package name: UPAK R )
1 2 3
REJ03G0662-0200 (P.
* * V IC = *10 µA, IE = 0 Collector to emitter breakdown voltage V(BR)CEO *100 * * V IC = *1 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO *5 * * V IE = *10 µA, IC = 0 Collector cutoff current ICBO * * *10 µA VCB = *100 V, IE = 0 DC current transfer ratio hFE1 100 * 2. |
| Part Number | 2SB1026 Datasheet |
|---|---|
| Description | PNP Transistors |
| Manufacturer | Kexin Semiconductor |
| Overview |
SMD Type
PNP Transistors 2SB1026
Transistors
■ Features
● Low frequency power amplifier ● Complementary to 2SD1419
1.70 0.1
0.42 0.1
0.46 0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter Coll.
* Low frequency power amplifier * Complementary to 2SD1419 1.70 0.1 0.42 0.1 0.46 0.1 * Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector current -Pulse Collector Power Dissipation Jun. |