2SB1054 Datasheet and Specifications PDF

The 2SB1054 is a Silicon PNP Transistor.

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Part Number2SB1054 Datasheet
ManufacturerPanasonic
Overview Power Transistors 2SB1054 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1485 ■ Features • Excellent collector current IC characteristic.
* Excellent collector current IC characteristics of forward current transfer ratio hFE
* Wide safe operation area
* High transition frequency fT
* Full-pack package which can be installed to the heat sink with one screw 21.0±0.5 15.0±0.2 Unit: mm 15.0±0.3 (0.7) 5.0±0.2 (3.2) 11.0±0.2 φ 3.2±0.1 .
Part Number2SB1054 Datasheet
DescriptionSILICON POWER TRANSISTOR
ManufacturerSavantIC
Overview ·With TO-3PFa package ·Complement to type 2SD1485 ·High transition frequency ·Wide area of safe operation APPLICATIONS ·For high power amplifier applications PINNING PIN 1 2 3 Base Collector Emitter D. DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=-3A ;IB=-0.3A IC=-3A ; VCE=-5V VCB=-100V; IE=0 VEB=-3V; IC=0 IC=-20mA ; VCE=-5V IC=-1A ; VCE=-5V IC=-3A ; VCE=-5V IE=0 ; VCB=-10V;f=1MHz IC=-0.5A ; VCE=-5V 20 40 20 MIN 2SB1054 SYMBOL VCEsat VBE ICBO IEBO hFE-1 h.
Part Number2SB1054 Datasheet
DescriptionPNP Transistor
ManufacturerInchange Semiconductor
Overview ·Low Collector Saturation Voltage- : VCE(sat)= -2.0V(Max)@IC= -3A ·Wide Area of Safe Operation ·Complement to Type 2SD1485 ·Minimum Lot-to-Lot variations for robust device performance and reliable ope. 3A VBE(on) Base-Emitter On Voltage IC= -3A; VCE= -5V ICBO Collector Cutoff Current VCB= -100V; IE= 0 IEBO Emitter Cutoff Current VEB= -3V; IC= 0 hFE-1 DC Current Gain IC= -20mA; VCE= -5V hFE-2 DC Current Gain IC= -1A; VCE= -5V hFE-3 DC Current Gain IC= -3A; VCE= -5V COB Output Cap.