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2SB1054 - PNP Transistor

Datasheet Summary

Description

Low Collector Saturation Voltage- : VCE(sat)= -2.0V(Max)@IC= -3A Wide Area of Safe Operation Complement to Type 2SD1485 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for high power amplification.

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Datasheet Details

Part number 2SB1054
Manufacturer INCHANGE
File Size 213.35 KB
Description PNP Transistor
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isc Silicon PNP Power Transistor 2SB1054 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -2.0V(Max)@IC= -3A ·Wide Area of Safe Operation ·Complement to Type 2SD1485 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power amplification. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -8 A 3 W 60 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.
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