| Part Number | 2SB1079 Datasheet |
|---|---|
| Manufacturer | Hitachi Semiconductor |
| Overview |
2SB1079
Silicon PNP Triple Diffused
Application
Low frequency power amplifier complementary pair with 2SD1559
Outline
TO-3P
2
1 1. Base 2. Collector (Flange) 3. Emitter
1 kΩ (Typ)
400 Ω (Typ) 3
.
∞ I C = *200 mA, RBE = ∞*1 I E = *50 mA, IC = 0 VCB = *100 V, IE = 0 VCE = *80 V, RBE = ∞ VCE = *3 V, IC = *10 A*1 I C = *10 A, IB = *20 mA*1 Collector to emitter breakdown V(BRCEO voltage Collector to emitter sustain voltage Emitter to base breakdown voltage Collector cutoff current VCEO(sus) V(B. |
2SB1079 Datasheet and Specifications PDF
The 2SB1079 is a PNP Transistor.
Key Specifications
| Max Operating Temp | 150 °C |
|---|
| Part Number | 2SB1079 Datasheet |
|---|---|
| Description | PNP Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·High DC Current Gain- : hFE = 1000(Min)@ IC= -10A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min) ·Complement to Type 2SD1559 ·Minimum Lot-to-Lot variations for robust device performa. otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -200mA, RBE= ∞ -100 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA, RBE= ∞ -100 V V(BR)CBO Collector-Base Breakdown Voltage IC= -0.1mA ,IE= 0 -100 V V(BR)EBO . |