Datasheet Details
| Part number | 2SB1079 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 199.26 KB |
| Description | PNP Transistor |
| Datasheet | 2SB1079-INCHANGE.pdf |
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Overview: isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor 2SB1079.
| Part number | 2SB1079 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 199.26 KB |
| Description | PNP Transistor |
| Datasheet | 2SB1079-INCHANGE.pdf |
|
|
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·High DC Current Gain- : hFE = 1000(Min)@ IC= -10A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min) ·Complement to Type 2SD1559 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -20 A ICM Collector Current-Peak -30 A IB Base Current- Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -3 A 100 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor 2SB1079 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -200mA, RBE= ∞ -100 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA, RBE= ∞ -100 V V(BR)CBO Collector-Base Breakdown Voltage IC= -0.1mA ,IE= 0 -100 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA ,IC= 0 -7 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -10A ,IB= -20mA -2.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -20A ,IB= -200mA -3.0 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= -10A ,IB= -20mA -2.5 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= -20A ,IB= -200mA -3.5 V ICBO Collector Cutoff current VCB= -100V, IE= 0 -0.1 mA ICEO Collector Cutoff current VCE= -80V, RBE= ∞ -1.0 mA hFE DC Current Gain IC= -10A ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SB1079 | PNP Transistor | Hitachi Semiconductor |
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