2SB1079 - PNP Transistor

Inchange Semiconductor

General Description

High DC Current Gain- : hFE = 1000(Min)@ IC= -10A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min) Complement to Type 2SD1559 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power ampli

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2SB1079 pnp transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2SB1079
Manufacturer	Inchange Semiconductor
File Size	199.26 KB
Description	PNP Transistor
Datasheet	2SB1079 Datasheet

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isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor 2SB1079 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= -10A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min) ·Complement to Type 2SD1559 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications.