Datasheet Details
| Part number | 2SB1075 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.38 KB |
| Description | PNP Transistor |
| Datasheet | 2SB1075-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2SB1075 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.38 KB |
| Description | PNP Transistor |
| Datasheet | 2SB1075-INCHANGE.pdf |
|
|
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·High Collector Current -IC= -2A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min.) ·Good Linearity of hFE ·Low Collector Saturation Voltage : VCE(sat)= -1.0V(Max.)@ IC= -3A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for AF output amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -2 A ICP Collector Current-Pulse PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -4 A 1.2 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB1075 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA;
IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= -2mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB1075 | SILICON POWER TRANSISTOR | SavantIC |
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