Silicon NPN triple diffused
Low Collector-Emitter Saturation Voltage
Complement to Type 2SD1558
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for low frequency power amplifier
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYM
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isc Silicon PNP Darlington Power Transistor
INCHANGE Semiconductor
2SB1077
DESCRIPTION ·Silicon NPN triple diffused ·Low Collector-Emitter Saturation Voltage ·Complement to Type 2SD1558 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low frequency power amplifier
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
-60
VCEO
Collector-Emitter Voltage
-60
VEBO
Emitter-Base Voltage
-7
IC
Collector Current-Continuous
-4
ICM
Collector Current-Peak
-8
Collector Power Dissipation
PC
TC=25℃ Collector Power Dissipation
Ta=25℃
40 2
Tj
Junction Temperature
150
Tstg
Storage Temperature Range
-55~150
UNIT V V V A A
W
℃ ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
2SB1077 Datasheet
