| Part Number | 2SB1118 Datasheet |
|---|---|
| Manufacturer | SANYO |
| Overview |
Ordering number:1784B
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1118/2SD1618
Low-Voltage High-Current Amplifier, Muting Applications
Features
· Low collector-to-emitter saturation voltage. · V.
* Low collector-to-emitter saturation voltage. * Very small size making it easy to provide high- density, small-sized hybrid IC’s. Package Dimensions unit:mm 2038 [2SB1118/2SD1618] ( ) : 2SB1118 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-t. |
2SB1118 Datasheet and Specifications PDF
The 2SB1118 is a PNP Transistor.
Key Specifications
| Max Operating Temp | 150 °C |
|---|
| Part Number | 2SB1118 Datasheet |
|---|---|
| Description | Transistor |
| Manufacturer | Kexin Semiconductor |
| Overview | SMD Type Transistors PNP Epitaxial Planar Silicon Transistors 2SB1118 Features Low collector-to-emitter saturation voltage. Very small size making it easy to provide highdensity, Absolute Maximum R. Low collector-to-emitter saturation voltage. Very small size making it easy to provide highdensity, Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Jumction temperature. |