| Part Number | 2SB1165 Datasheet |
|---|---|
| Manufacturer | SANYO |
| Overview |
Ordering number:2046A
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1165/2SD1722
50V/5A Switching Applications
Applications
· Relay drivers, high-speed inverters, converters.
Features
· Low collec.
* Low collector-to-emitter saturation voltage. * High fT. * Excellent linearity of hFE. * Fast switching time. Package Dimensions unit:mm 2043A [2SB1165/2SD1722] ( ) : 2SB1165 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage E. |
2SB1165 Datasheet PDF
The 2SB1165 is a PNP Transistor.
| Part Number | 2SB1165 Datasheet |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-126 package ·Complement to type 2SD1722 ·Low collector saturation voltage ·Fast switching time APPLICATIONS ·For use in relay drivers,high-speed inverters,converters. PINNING PIN 1 2 3 Emitte. se breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-1mA ;RBE=; IC=-10µA ;IE=0 IE=-10µA ;IC=0 IC=-3A; IB=-0.15A IC=-. |
| Part Number | 2SB1165 Datasheet |
|---|---|
| Description | PNP Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Low Collector Saturation Voltage- : VCE(sat)= -0.55V(Max)@IC= -3A ·High fT ·Good Linearity of hFE ·Fast switching time ·Complement to Type 2SD1722 ·Minimum Lot-to-Lot variations for robust device per. BR)EBO Emitter-Base Breakdown Voltage IE= 0.1mA; IC= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA, RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC=-0.1mA; IE=0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.15A VBE(sat) Base-Emitter Saturation Voltage IC= -3A; IB. |