2SB1215 Datasheet and Specifications PDF

The 2SB1215 is a PNP/NPN Epitaxial Planar Silicon Transistors.

Key Specifications

PackageTO-252-3
Pins3
Max Operating Temp150 °C
Min Operating Temp-55 °C
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Part Number2SB1215 Datasheet
ManufacturerSANYO
Overview Ordering number:EN2539B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1215/2SD1815 High-Current Switching Applications Applications · Relay drivers, high-speed inverters, converters, and other gen.
* Low collector-to-emitter saturation voltage.
* Excllent linearity of hFE.
* Small-sized package permitting 2SB1215/2SD1815- applied sets to be made small and slim.
* High fT.
* Fast switching time. Package Dimensions unit:mm 2045B [2SB1215/2SD1815] unit:mm 2044B [2SB1215/2SD1815] 1 : Base 2 : .
Part Number2SB1215 Datasheet
DescriptionBipolar Transistor
Manufactureronsemi
Overview Ordering number : EN2539C 2SB1215/2SD1815 Bipolar Transistor (–)100V, (–)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA Applications • Relay drivers, high-speed inverters, converters,.
* Low collector to emitter saturation voltage
* Excllent linearity of hFE
* Small-sized package permitting 2SB1215/2SD1815-applied sets to be made small and slim
* High fT
* Fast switching time
* Halogen free compliance Specifications ( ): 2SB1215 Absolute Maximum Ratings at Ta=25°C Paramete.
Part Number2SB1215 Datasheet
DescriptionSilicon PNP Power Transistor
ManufacturerInchange Semiconductor
Overview ·Excellent linearity of hFE ·Small and slim package making it easy to make 2SB1215/2SD1815-used set smaller ·Low collector-to-emitter saturation voltage ·Fast switching speed ·100% avalanche tested ·M. CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -1.5A; IB= -150mA VBE(sat) Base-Emitter Saturation Voltage IC= -1.5A; IB= -150mA V(BR)CBO Collector-Base Breakdown Voltage IC= -10uA; IB= 0 V(BR)CEO Collector-Emitt.
Part Number2SB1215 Datasheet
DescriptionPNP Transistors
ManufacturerKexin Semiconductor
Overview SMD Type Transistors Strobe High-Current Switching Applications 2SB1215 TO-252 Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Low collector-to-emitter saturation voltage. Excllent linearity of hFE. Low collector-to-emitter saturation voltage. Excllent linearity of hFE. +0.2 9.70 -0.2 +0.15 1.50 -0.15 6.50 +0.2 5.30-0.2 +0.15 -0.15 High fT. Fast switching time. +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15.

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