2SB1215 Description
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -1.5A; IB= -150mA VBE(sat) Base-Emitter Saturation Voltage IC= -1.5A; IB= -150mA V(BR)CBO Collector-Base Breakdown Voltage IC= -10uA;.