| Part number | 2SB1216 |
|---|---|
| Datasheet | 2SB1216-InchangeSemiconductor.pdf |
| File Size | 254.08 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon PNP Power Transistor |
|
|
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A VBE(sat) Base-Emitter Saturation Voltage IC= -2A; IB= -0.2A V(BR)CBO Collector-Base Breakdown Voltage IC= -10uA;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SB1216 | PNP/NPN Transistor | Sanyo Semicon Device |
 |
2SB1216 | PNP Transistors | Kexin |
 |
2SB1216 | Bipolar Transistor | ON Semiconductor |
 |
2SB1216 | PNP PLANAR TRANSISTOR | Unisonic Technologies |
 |
2SB1216 | PNP Epitaxial Planar Silicon Transistors | GME |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SB1215 | Silicon PNP Power Transistor |
| 2SB1217 | Silicon PNP Power Transistor |
| 2SB1201 | Silicon PNP Power Transistor |
| 2SB1202 | Silicon PNP Power Transistor |
| 2SB1203 | Silicon PNP Power Transistor |
| 2SB1204 | Silicon PNP Power Transistor |
| 2SB1261-K | Silicon NPN Power Transistor |
| 2SB1275 | Silicon PNP Power Transistor |
| 2SB1290 | Silicon PNP Power Transistor |
| 2SB1089 | Silicon PNP Power Transistors |
