| Part Number | 2SB1216 Datasheet |
|---|---|
| Manufacturer | Galaxy Microelectronics |
| Overview |
PNP Epitaxial Planar Silicon Transistors 2SB1216I 2SB1216
Features
Fast switching speed Low collector-to-emitter saturation voltage Good linearity of hFE Small and slim package facilitating co.
* Fast switching speed * Low collector-to-emitter saturation voltage * Good linearity of hFE * Small and slim package facilitating compactness of sets * RoHS compliant with Halogen-free Mechanical Data * Case: TO-251, TO-252 * Molding Compound: UL Flammability Classification Rating 94V-0 * Terminal. |
2SB1216 Datasheet and Specifications PDF
The 2SB1216 is a PNP Epitaxial Planar Silicon Transistors.
Key Specifications
| Package | TO-252-3 |
|---|---|
| Pins | 3 |
| Max Frequency | 1 MHz |
| Height | 2.3 mm |
| Length | 6.5 mm |
| Width | 5.5 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | 2SB1216 Datasheet |
|---|---|
| Description | PNP/NPN Transistor |
| Manufacturer | SANYO |
| Overview |
Ordering number:ENN2540A
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1216/2SD1816
High-Current Switching Applications
Applications
· Suitable for relay drivers, high-speed inverters, converters,.
* Low collector-to-emitter saturation voltage. * Good linearity of hFE. * Small and slim package facilitating compactness of sets. * High fT. * Fast switching time. Package Dimensions unit:mm 2045B [2SB1216/2SD1816] 6.5 5.0 2.3 4 0.5 5.5 1.5 7.0 unit:mm 2044B 0.85 0.7 0.6 12 3 2.3 2.3 0.8 1.6 7. |
| Part Number | 2SB1216 Datasheet |
|---|---|
| Description | Silicon PNP Power Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Excellent linearity of hFE ·Small and slim package facilitating compactness of sets ·Low collector-to-emitter saturation voltage ·Fast switching speed ·100% avalanche tested ·Minimum Lot-to-Lot varia. unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A VBE(sat) Base-Emitter Saturation Voltage IC= -2A; IB= -0.2A V(BR)CBO Collector-Base Breakdown Voltage IC= -10uA; IB= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA. |
| Part Number | 2SB1216 Datasheet |
|---|---|
| Description | Bipolar Transistor |
| Manufacturer | onsemi |
| Overview |
2SB1216, 2SD1816
Bipolar Transistor (−)100V, (−)4A, Low VCE(sat), (PNP)NPN Single
Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactn.
* Low Collector to Emitter Saturation Voltage * Small and Slim Package Facilitating Compactness of Sets * High fT * Good Linearity of hFE * Fast Switching Time Typical Applications * Suitable for Relay Drivers * High Speed Inverters * Converters * Other General High Current Switching Applications E. |