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2SB1216 - Transistors

Key Features

  • Low collector-to-emitter saturation voltage. Good linearity of hFE. High fT. +0.2 9.70 -0.2 +0.15 1.50 -0.15 Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 6.50 +0.2 5.30-0.2 +0.15 -0.15 Fast switching time. +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Col.

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SMD Type High-Current Switching Applications 2SB1216 TO-252 Transistors Features Low collector-to-emitter saturation voltage. Good linearity of hFE. High fT. +0.2 9.70 -0.2 +0.15 1.50 -0.15 Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 6.50 +0.2 5.30-0.2 +0.15 -0.15 Fast switching time. +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation TC = 25 Jumction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC ICP PC Rating -120 -100 -6 -4 -8 1 20 150 -55 to +150 Unit V V V A A W W 3 .8 0 www.