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2SB1216 - PNP/NPN Transistor

Key Features

  • Low collector-to-emitter saturation voltage.
  • Good linearity of hFE.
  • Small and slim package facilitating compactness of sets.
  • High fT.
  • Fast switching time. Package Dimensions unit:mm 2045B [2SB1216/2SD1816] 6.5 5.0 2.3 4 0.5 5.5 1.5 7.0 unit:mm 2044B 0.85 0.7 0.6 12 3 2.3 2.3 0.8 1.6 7.5 1.2 0.5 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP [2SB1216/2SD1816] 6.5 2.3 5.0 0.5 4 0.8 5.5 1.5 2.5 7.0 1.2 0.85 1 0.6 2 3 2.3 2.3 0.5 1.2 0 to 0.2.

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Other Datasheets by SANYO (now Panasonic)

Part Number Description
2SB1214 PNP Epitaxial Planar Silicon Transistor
2SB1215 PNP/NPN Epitaxial Planar Silicon Transistors
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2SB1202 PNP/NPN Epitaxial Planar Silicon Transistors
2SB1203 PNP/NPN Epitaxial Planar Silicon Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:ENN2540A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1216/2SD1816 High-Current Switching Applications Applications · Suitable for relay drivers, high-speed inverters, converters, and other general high-current switching applications. Features · Low collector-to-emitter saturation voltage. · Good linearity of hFE. · Small and slim package facilitating compactness of sets. · High fT. · Fast switching time. Package Dimensions unit:mm 2045B [2SB1216/2SD1816] 6.5 5.0 2.3 4 0.5 5.5 1.5 7.0 unit:mm 2044B 0.85 0.7 0.6 12 3 2.3 2.3 0.8 1.6 7.5 1.2 0.5 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP [2SB1216/2SD1816] 6.5 2.3 5.0 0.5 4 0.8 5.5 1.5 2.5 7.0 1.2 0.85 1 0.6 2 3 2.3 2.3 0.5 1.2 0 to 0.