2SB1216
2SB1216 is PNP Epitaxial Planar Silicon Transistors manufactured by Galaxy Microelectronics.
- Part of the 2SB1216I comparator family.
- Part of the 2SB1216I comparator family.
Features
- Fast switching speed
- Low collector-to-emitter saturation voltage
- Good linearity of h FE
- Small and slim package facilitating pactness of sets
- Ro HS pliant with Halogen-free
Mechanical Data
- Case: TO-251, TO-252
- Molding pound: UL Flammability Classification Rating 94V-0
- Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,
Method 208
Ordering Information
TO-251
Part Number 2SB1216I-Q 2SB1216I-R 2SB1216I-S 2SB1216I-T 2SB1216-Q 2SB1216-R 2SB1216-S 2SB1216-T
Package TO-251 TO-251 TO-251 TO-251 TO-252 TO-252 TO-252 TO-252
Shipping Quantity 80 pcs / Tube 80 pcs / Tube 80 pcs / Tube 80 pcs / Tube
80 pcs / Tube or 2500 pcs / Tape & Reel 80 pcs / Tube or 2500 pcs / Tape & Reel 80 pcs / Tube or 2500 pcs / Tape & Reel 80 pcs / Tube or 2500 pcs / Tape & Reel
TO-252
Marking Code B1216 B1216 B1216 B1216 B1216 B1216 B1216 B1216
Maximum Ratings (@ TA = 25°C unless otherwise specified)
Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Current (Continuous) Collector Current (Pulse)
Symbol VCBO VCEO VEBO IC ICM
Thermal Characteristics
Parameter Power Dissipation(TA = 25°C) Junction Temperature Storage Temperature Range
Symbol PD TJ TSTG
Value -120 -100 -6 -4 -8
Value 1
-55 ~ +150 -55 ~ +150
Unit V V V A A
Unit W °C °C
STM0329A: July 2023 [1.2]
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PNP Epitaxial Planar Silicon Transistors 2SB1216I 2SB1216
Electrical Characteristics (@ TA = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min. Typ. Max. Unit
Collector-Base Breakdown...
