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2SB1217 Datasheet Silicon PNP Power Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon PNP Power Transistor 2SB1217.

General Description

·High Collector Current -IC= -3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to Type 2SD1818 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter, driver, solenid and motor .

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICP Collector Current-Pulse IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature Tstg Storage Temperature Range -60 V -60 V -7 V -3 A -5 A -0.5 A 10 W 1.3 150 ℃ -55~150 ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -1.5A;

IB= -0.15A VBE(sat) Base-Emitter Saturation Voltage IC= -1.5A;

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