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2SB1217 - Silicon PNP Power Transistor

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Part number 2SB1217
Manufacturer Inchange Semiconductor
File Size 212.88 KB
Description Silicon PNP Power Transistor
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Description

High Collector Current -IC= -3A Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) Good Linearity of hFE Low Saturation Voltage Complement to Type 2SD1818 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter, driver, solenid and motor .ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emit

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