2SB1217 - Silicon PNP Power Transistor

Inchange Semiconductor

General Description

High Collector Current -IC= -3A Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) Good Linearity of hFE Low Saturation Voltage Complement to Type 2SD1818 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Desig

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2SB1217 silicon pnp power transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2SB1217
Manufacturer	Inchange Semiconductor
File Size	212.88 KB
Description	Silicon PNP Power Transistor
Datasheet	2SB1217 Datasheet

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isc Silicon PNP Power Transistor 2SB1217 DESCRIPTION ·High Collector Current -IC= -3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to Type 2SD1818 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter, driver, solenid and motor .