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Transistor
2SB1218A
Silicon PNP epitaxial planer type
For general amplification Complementary to 2SD1819A
2.1±0.1
Unit: mm
s Features
q q
0.425
1.25±0.1
0.425
High foward current transfer ratio hFE. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
0.65
1
2.0±0.2
1.3±0.1
0.65
3
2
0.2
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
(Ta=25˚C)
0.9±0.1
–45 –45 –7 –200 –100 150 150 –55 ~ +150
V V V mA mA mW ˚C ˚C
0.7±0.1
Ratings
Unit
0 to 0.1
0.2±0.
2SB1218A Datasheet
